Silicon solar cells with passivating contacts: Classification and performance

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of about 720 mV and 704 mV for n-type and p-type, respe...

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Articles you may be interested in Compositional study of defects in microcrystalline silicon solar cells using spectral decomposition in the scanning transmission electron microscope Appl. Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells Appl. Photocurrent increase in n-i-p thin film silicon solar cells by gu...

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer. This mixed-phase layer...

Calcium contacts to n-type crystalline silicon solar cells

Direct metallization of lightly doped n-type crystalline silicon (c-Si) is known to routinely produce non-Ohmic (rectifying) contact behaviour. This has inhibited the development of n-type c-Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p-type c-Si solar cells. In this contribution we demonstrate that low resistance Ohmic contact to n-type c...